Djelti, Hamida, University Abou Bekr Belkaid of Tlemcen, Algeria

• Vol 12, No 3: June 2022 - Telecommunication System and Technology
  Numerical investigation of the performance of AlGaN/GaN/BGaN double-gate double-channel high electron mobility transistor
  Abstract  PDF

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International Journal of Electrical and Computer Engineering (IJECE)
p-ISSN 2088-8708, e-ISSN 2722-2578

This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).