Jung, Hak Kee, Kunsan National University, Korea, Republic of

• Vol 6, No 1: February 2016 - Circuits and Electronics
  Projected Range Dependent Tunneling Current of Asymmetric Double Gate MOSFET
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• Vol 6, No 6: December 2016 - Circuits and Electronics
  The Impact of Tunneling on the Subthreshold Swing in Sub-20 nm Asymmetric Double Gate MOSFETs
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International Journal of Electrical and Computer Engineering (IJECE)
p-ISSN 2088-8708, e-ISSN 2722-2578

This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).