El-amiri, Asseya, Ibnou Zohr University, Morocco

• Vol 14, No 2: April 2024 - Circuits and Electronics
  A proposal and simulation analysis for a novel architecture of gate-all-around polycrystalline silicon nanowire field effect transistor
  Abstract  PDF

This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.

International Journal of Electrical and Computer Engineering (IJECE)
p-ISSN 2088-8708, e-ISSN 2722-2578

This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).