Sahel, Aicha, University of Casablanca, Morocco
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Vol 9, No 5: October 2019 - Circuits and Electronics
How does technological parameters impact the static current gain of InP-based Single Heterojunction Bipolar Transistor?
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International Journal of Electrical and Computer Engineering (IJECE)
p-ISSN 2088-8708, e-ISSN 2722-2578
This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).