Baghdad, Abdennaceur, University of Casablanca, Morocco
-
Vol 9, No 5: October 2019 - Circuits and Electronics
How does technological parameters impact the static current gain of InP-based Single Heterojunction Bipolar Transistor?
Abstract PDF
International Journal of Electrical and Computer Engineering (IJECE)
p-ISSN 2088-8708, e-ISSN 2722-2578