Baghdad, Abdennaceur, University of Casablanca, Morocco

• Vol 9, No 5: October 2019 - Circuits and Electronics
  How does technological parameters impact the static current gain of InP-based Single Heterojunction Bipolar Transistor?
  Abstract  PDF

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International Journal of Electrical and Computer Engineering (IJECE)
p-ISSN 2088-8708, e-ISSN 2722-2578

This journal is published by the Institute of Advanced Engineering and Science (IAES).