S-Bend Silicon-On-Insulator (SOI) Large Cross-Section Rib Waveguide for Directional Coupler

Nurdiani Zamhari, Abang Annuar Ehsan, Mohd Syuhaimi Abdul Rahman


S-bend contributes the high losses in the silicon-on-insulator (SOI) large cross-section rib waveguide (LCRW). The objective of this work is to investigate S-bend SOI LCRW with two different single-mode dimensions named symmetrical and asymmetrical. The S-bend SOI LCRW has been simulating using beam propagation method in OptiBPM software. The asymmetrical waveguide with two different dimension arc given the best performance if compared to others dimension with 3 µm of waveguide spacing. It achieved 92.24% and 91.10% of normalized output power (NOP) for 1550 nm and 1480 nm wavelength respectively. Moreover, the minimum of S-bend spacing between the two cores is 0.9 µm for both 1550 nm and 1480 nm. Therefore, asymmetrical waveguide with two different dimension arc and 0.9 µm of S-bend spacing are chosen. This analysis is important to determine the right parameter in order to design the SOI passive devices. However, future work should be done to see the performance by designing the coupler and implement in the real system.


s-bend waveguide, SOI LCRW, symmetrical waveguide, asymmetrical waveguide, s-bend spacing,

Full Text:


DOI: http://doi.org/10.11591/ijece.v7i6.pp3299-3305

Creative Commons License
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.

International Journal of Electrical and Computer Engineering (IJECE)
p-ISSN 2088-8708, e-ISSN 2722-2578

This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).