Ohmic Contact characterization Using Image Processing

Shashikala B.N., Nagabhushana B.S.


The Ti/Al/Ni/Au films deposited by electron beam evaporation on n type GaN was demonstrated as a suitable solution for low resistive and thermally stable contact to n-type GaN. The surface morphology of Ti/Al/Ni/Au and Ti/Al contacts were studied as a function of the annealing process conditions using image processing techniques. The algorithm was implemented using the MATLAB software. Using the algorithm made, the area occupied by the pores and porosity in the ohmic contact structures were obtained.


GaN, ohmic contact, Porosity, surface morphology

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DOI: http://doi.org/10.11591/ijece.v5i6.pp1347-1353

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International Journal of Electrical and Computer Engineering (IJECE)
p-ISSN 2088-8708, e-ISSN 2722-2578

This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).