Modelling Electronic Characteristic of InP/InGaAs Double Heterojunction Bipolar Transistor

Berrichi Yamina, Ghaffour Kherreddine

Abstract


In this paper, we are interested in studying InP/InGaAs heterojunction bipolar transistor NPN type. First and for most we should describe the structure of our simulation, then, we ploted at room temperature: Energy band diagram, Gummel plot, IC-VC characteristic and conduction bands for different values of VBE.  The simulation of this structure has demonstrated the validity of our model and the method of the simulation.

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DOI: http://doi.org/10.11591/ijece.v5i3.pp525-530

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International Journal of Electrical and Computer Engineering (IJECE)
p-ISSN 2088-8708, e-ISSN 2722-2578

This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).