Fadila Souad, Nouar, University Djilali Liabès of Sidi bel Abbès, Algeria

• Vol 5, No 2: April 2015 - Circuits and Electronics
  Three-Dimensional Devices Transport Simulation Lifetime and Relaxation Semiconductor
  Abstract  PDF

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International Journal of Electrical and Computer Engineering (IJECE)
p-ISSN 2088-8708, e-ISSN 2722-2578

This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).