Guen-Bouazza, Ahlam, University AboubekrBelkaid, Algeria
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Vol 10, No 2: April 2020 - Circuits and Electronics
DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application
Abstract PDF
ISSN 2088-8708, e-ISSN 2722-2578