Guen-Bouazza, Ahlam, University AboubekrBelkaid, Algeria

• Vol 10, No 2: April 2020 - Circuits and Electronics
  DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application
  Abstract  PDF

ISSN 2088-8708, e-ISSN 2722-2578