Characterization of Defect Induced Multilayer Graphene

Marriatyi Morsin, Suhaila Isaak, Marlia Morsin, Yusmeeraz Yusof

Abstract


A study of oxygen plasma on multilayer graphene is done with different flow rates. This is to allow a controlled amount of defect fabricated on the graphene. Results from the study showed that the intensity ratio of defect between D peak and G peak was strongly depended on the amount of oxygen flow rate thus affected the 2D band of the spectra. The inter-defect distance LD ≥ 15 nm of each sample indicated that low-defect density was fabricated. The surface roughness of the multilayer graphene also increased and reduced the conductivity of the multilayer graphene.


Keywords


multilayer graphene, oxygen plasma, raman spectroscopy, reactive ion etching

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DOI: http://doi.org/10.11591/ijece.v7i3.pp1452-1458

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International Journal of Electrical and Computer Engineering (IJECE)
p-ISSN 2088-8708, e-ISSN 2722-2578

This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).