A 5G mm-Wave Compact VCO in 0.25 µm pHEMT Technology

Abdelhafid ES-SAQY, Maryam ABATA, Mahmoud MEHDI, Mohammed FATTAH, Said MAZER, Moulhime EL BEKKALI, Catherine ALGANI


A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) based on GaAs pHEMT of PH25 process from UMS foundry is presented in this paper. The VCO is designing by adopting varactors based on pHEMT transistors for achieving a very small chip size.
Simulation results have shown that the designed VCO delivers an output power of 0 dBm over the entire tuning range from 27.67 GHz to 28.91 GHz, a phase noise of -96,274 dBc/Hz and -116,24 dBc/Hz at 1 and 10 MHz offset frequency respectively. The DC power consumed by the VCO is about of 111 mW and it occupies an area of 0.268 mm2. According to our knowledge, this structure occupies the smallest surface area compared to oscillators designed with pHEMTs, published in the literature.


Compact VCO; pHEMT varactor; pHEMT transistor; mm-Wave band; 5G


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DOI: http://doi.org/10.11591/ijece.v11i1.pp%25p
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