Efficient high-gain low-noise amplifier topologies using GaAs FET at 3.5 GHz for 5G systems
ZARRIK, Samia et al.
Efficient high-gain low-noise amplifier topologies using GaAs FET at 3.5 GHz for 5G systems.
International Journal of Electrical and Computer Engineering (IJECE), [S.l.], v. 15, n. 4, p. 3833-3842, aug. 2025.
ISSN 2722-2578.
Available at: <https://ijece.iaescore.com/index.php/IJECE/article/view/38361>. Date accessed: 05 aug. 2025.
doi:http://doi.org/10.11591/ijece.v15i4.pp3833-3842.