In this work, we simulated and modeled the single electron transistor based on silicon quantum dot. We simulated the device in Atlas TCAD using NEGF formalism in transport direction coupled with Schrodinger equation in transverse direction. The SET characteristics such as Coulomb blockade and Coulomb diamonds were observed in the results obtained from the simulations and the model. The IV characteristics of the SET were obtained from the model having a good agreement with the simulations. The proposed model is simple, efficient, flexible and provides insights on the physics of the device. In the future, we will include in the model the effect of the change in number of electrons on the width of the transmission peaks. We will also use the device for circuit level implementation.