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\CopyrightLine[Copyright]{201x}{Institute of Advanced Engineering and Science.}

\author{\bfseries Malik Ashter Mehdy}
\author{\bfseries Mariagrazia Graziano}
\author{\bfseries Gianluca Piccinini}
%%author's affiliation
\affil{Department of Electronics and Telecommunications, Politecnico di Torino, Italy}

\title{Simulation and Modeling of Silicon Based Single Electron Transistor}
\shorttitle{Silicon Based Single Electron Transistor}


\begin{document}
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%\thanks{Malik Ashter Mehdy, Mariagrazia Graziano, Gianluca Piccinini
%are with the Electronics and Telecommunication Department of Politecnico di Torino,
%Italy.
%}

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\journalname{International Journal of Electrical and Computer Engineering (IJECE)}
\journalshortname{IJECE}
\journalhomepage{http://iaesjournal.com/online/index.php/IJECE}
\vol{x}
\no{x}
\months{xx}
\years{2017}
\issn{2088-8708}

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\textbf{Article Info}
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Received \today
\par 
Revised 
\par 
Accepted

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\begin{keyword}

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Single Electron Transistor \sep TCAD Simulations \sep NEGF \sep Coulomb Blockade \sep Transmission Spectrum

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\begin{abstract}
In this work, we simulated and modeled silicon quantum dot based single electron transistor (SET). We simulated the device using non-equilibrium Green's function (NEGF) formalism in transport direction coupled with Schrodinger equation in transverse directions. The characteristics of SET such as Coulomb blockade and Coulomb diamonds were observed. We also present a new efficient model to calculate the current voltage (IV) characteristics of the SET. The IV characteristic achieved from the model are very similar to those from simulations both in shape and magnitude. The proposed model is capable of reproducing the Coulomb diamond diagram in good agreement with the simulations. The model, which is based on transmission spectrum, is simple, efficient and provides insights on the physics of the device. The transmission spectrum at equilibrium is achieved from simulations and given as input to the model. The model then calculates the evolved transmission spectra at non-equilibrium conditions and evaluates the current using Landauers formula.
\end{abstract}
}

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\emph{\textbf{Corresponding Author:}}\\
%% correspondence info. separate by \\
Malik Ashter Mehdy\\
Department of Electronics and Telecommunications\\
Politecnico di Torino,\\ 
corso Duca degli Abruzzi, 24, Torino, Italy\\
malik.mehdy@polito.it
}
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\section{Introduction}
\label{intro}

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\section{Simulations of the Device}
\label{sec:sim}
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\section{The Model}
\label{sec:model}
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\section{Results and Discussion}
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\section{Conclusions}
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% \section{Acknowledgements}
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\section*{BIOGRAPHY OF AUTHORS}

\begin{biography}[{\includegraphics[width=3cm,height=4cm,clip,keepaspectratio]{./pics/pic1}}]
\textbf{Malik Ashter Mehdy} recieved his B.E. Electronics degree from Federal Urdu University, Islamabad, Pakistan in 2011 and M.S. degree in Nanotechnology from Politecnico di Torino, Italy in 2014. He is currently a PhD student in Department of Electronics and Telecommunication at Politecnico di Torino,Italy. His research interests include, simulation and modeling of silicon based single electron transistor.
\end{biography}

\begin{biography}[{\includegraphics[width=3cm,height=4cm,clip,keepaspectratio]{./pics/pic2}}]
\textbf{Mariagrazia Graziano} received the DrEng and
the PhD degrees in Electronics Engineering from
the Politecnico di Torino, Italy, in 1997 and 2001,
respectively. Since 2002, she is a researcher
and since 2005, an assistant professor at the
Politecnico di Torino. Since 2008, she is adjunct
faculty at the University of Illinois at Chicago and
since 2014 she is a Marie-Skłodowska-Curie Intra-European Fellow
at the London Centre for Nanotechnology.
Her research interests include design of CMOS and 
“beyond CMOS” devices, circuits and architectures. 
She is author and coauthor of more
than 120 published works. She is a Member of
the IEEE since 2007. Further info on her homepage: http://www.det.polito.it/personale/scheda/(nominativo)/mariagrazia.graziano
\end{biography}


\begin{biography}[{\includegraphics[width=3cm,height=4cm,clip,keepaspectratio]{./pics/pic3}}]
\textbf{Gianluca Piccinini} is a Full Professor since 2006
at the Department of Electronics of Politecnico di
Torino, Italy, where he teaches electron devices
and integrated system technology. He received
the Dr. Ing and the Ph.D. degrees in electronics
engineering in 1986 and 1990 respectively. His
research activities started at the end of the 1980s,
were initially focused on VLSI architecture for
artificial intelligence and moved, during the
1990s, toward the physical design of VLSI
systems for high rate and high-speed transmission and coding algorithms.
His current interests involve the introduction of new technologies as
molecular electronics in integrated systems where he studies transport,
advanced microfabrication and self-assembly technologies in molecular
scale systems. He is author and co-author of more than 100 published
works and is the holder of one international patent.
Further info on his homepage: http://www.det.polito.it/personale/scheda/(nominativo)/gianluca.piccinini
\end{biography}






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